Abstract
A new 600V high-voltage IC (HVIC) featuring a high noise tolerance is proposed. The purpose of the proposed HVIC is to achieve the high noise tolerance without an increase of the fabrication cost. The basic device concept is to arrange a P-separation layer around the high-side control part, which is called a new self-shielding structure, to reduce a hole current injection under the condition of negative transient voltage noise. By applying the new self-shielding structure in the HVIC, more than 3x higher noise tolerance (−95V/1μs) and 20% die shrink can be obtained compared with a conventional HVIC, without additional fabrication process. This means the noise tolerance of the fabricated HVIC with proposed structure is high enough to be applied to over 600V/50A class power conversion applications.
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