A 600 V High-Voltage IC Technique With a New Self-Shielding Structure for High Noise Tolerance and Die Shrink

Abstract

A novel 600 V high-voltage IC (HVIC) featuring a high noise tolerance is proposed. The purpose of the proposed HVIC is to achieve the high noise tolerance without an increase of the fabrication cost. The basic device concept is to arrange a P− separation layer around the high-side control part, which is called a new self-shielding structure, to reduce a hole current injection under the condition of negative transient voltage noise. By applying the new self-shielding structure in the HVIC, more than $3\times $ higher noise tolerance (−95 V/ $1~\mu \text{s}$ ) and 20% die shrink can be obtained compared with a conventional HVIC, without additional fabrication process. This means the noise tolerance of the fabricated HVIC with proposed structure is high enough to be applied to over 600 V/50-A class power conversion applications. In this paper, the new self-shielding concept of the proposed 600 V-class HVIC is presented with the simulation and experimental results.