Abstract
A metal-nitride-oxide-silicon (MNOS) one-time-programmable cell with fast programming, high reliability, and fully low-temperature polycrystalline-silicon (LTPS) panel compatible process has been proposed for system-on-panel applications. This cell adopting tunneling programming scheme has a very wide reading window with superior program efficiency. Furthermore, fast program efficiency and high disturb immunity are both obtained in the LTPS panel technology by a divided voltage operation. Through channel FN programming, superior data retention and low-power operation are therefore achieved. The new embedded MNOS cell has provided a promising one-time-programming memory solution on the LTPS panels' applications.
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