Formation of stacked oxide/Y2TiO5/oxide layers for flash memory application

Abstract

In this letter, the authors propose the formation of stacked oxide/Y2TiO5/oxide layers for flash memory application. The quality of a high-k Y2TiO5 memory was examined by x-ray diffraction, x-ray photoelectron spectroscopic, atomic force microscopy, capacitance-voltage curves, and data retention. When using Fowler-Nordheim for charging and discharging, the Y2TiO5 memory annealed at 900°C for 30s exhibited large flatband-voltage shifting (memory window of 4.2V) and superior data retention (charge loss of 6% at room temperature) because of the higher probability for trapping the charge carriers and they trapped in the deep trap level of Y2TiO5 due to the formation of a well-crystallized Y2TiO5 structure and the reduction of Y-silicate layer.