Abstract
Crossbar array architecture is usually used for the high-density integration of the RRAM device. However, the large sneak current in the passive crossbar array limits the increase in the integration density. In this brief, the bipolar TiN/TaOx/Pt RRAM device is proposed as the dynamic selector for the unipolar Pt/TaOx/Pt RRAM device to suppress the sneak current in the crossbar array. The testing results show that the bipolar RRAM can act as a good selector, and the sneak current is reduced by about two orders estimated by the 1/2 Vread voltage scheme. With the suppressed sneak current, the maximum size of the crossbar array with the bipolar RRAM selector can be increased to more than 1 Mb according to the simulation results, indicating that the bipolar RRAM selector has great potential for the high-density memory applications.
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