Abstract
AbstractIn the present work, we present a new design called the Dual‐Material‐gate (DM) Gallium Nitride (GaN)‐MESFET to improve the immunity against short channel effects (SCEs). The analytical analysis includes the modeling of the channel potential, subthreshold swing, threshold voltage and Drain‐Induced Lowering Barrier (DIBL). The influence of gate length and the work function of each gate region on subthreshold behavior was investigated using the developed analytical models. The developed analytical approaches are verified and validated by the good agreement found with the 2D numerical simulations for wide range of device parameters and bias conditions. The proposed (DM) GaN‐MESFET can alleviate the critical problem and further improve the immunity of SCEs of deep submicron GaN‐MESFET‐based circuits for low power and high Frequency applications (© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
Published Version
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call