A new deposition process for Cu(In,Ga)(S,Se)2 solar cells by one-step electrodeposition of mixed oxide precursor films and thermochemical reduction

Abstract

One step electrochemical deposition of Cu-In-Ga mixed oxide precursor film on Mo substrate is carried out by potentiostatic method in an acidic nitrate based electrolyte. Deposition parameters, such as ions concentration, deposition time and potential, enable to control accurately the layer composition and thickness. The oxide layer is subsequently transformed into metallic alloy by thermal reduction, and selenized into Cu(In,Ga)Se2 compound. First cell results show conversion efficiency up to 9.4%.