Abstract
On the basis of exact resultant solution of two-dimensional Poisson equation, a new compact subthreshold behavior model comprising two-dimensional potential, threshold voltage, subthreshold current and subthreshold swing for the dual-material surrounding gate (DMSG) MOSFETs is successfully developed. The model shows its validity by a good agreement with the simulated results from published device simulation software MEDICI. Besides offering the physical insight into device physics, the model provides the basic designing guidance for the DMSG MOSFETs.
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