Abstract
In this paper a new N-channel MOS transistor structure providing the improvement of electrical characteristics with respect to the conventional structure and simplified fabrication compared to generally accepted drain extension structure is presented. Description and optimisation of technologycal procedure for fabrication of the new N-channel MOS transistor structure are given. Also, static and dynamic characteristics of the N-channel MOS transistor realized by new procedure are investigated and compared to the corresponding characteristics of N-channel MOS transistors realized by conventional and drain extension procedures. Finally, reliability of the CMOS ICs realized by new procedure is investigated using both static and dynamic life tests.
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