Abstract
A new device model that takes into account of a surface adsorbate layer (ADL) is generated to study the C-V characteristics of the hydrogen-terminated diamond (HTD) MOSFET. In this model, the ADL acts like a reservoir of hole carriers and forms a hetero-structure with the hydrogen-terminated diamond surface. Our device model is applied to the C-V characteristics of a practical device and the results match well. This work is helpful in computer-aided design and optimization of future HDT devices.
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