Abstract
A new method is described that allows to detect the presence of a Bose condensate of biexcitons in a direct band gap material. It probes the accumulation of biexcitons in the coherent k = 0 state by measuring the increase of the optical phase conjugation signal of a crystal simultaneously pumped by an intense incoherent pump source. Experimental verification of the method is achieved in CuCl at low temperature. Results show an increase of the k = 0 biexciton mode occupation number by at least 8.6 × 105 when the randomly injected biexciton density exceeds the critical value for Bose condensation.
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