Abstract
A new lightly doped drain (LDD) metal oxide semiconductor field effect transistor structure is presented that provides substantial overlap of the gate over the n− region independent of the n− junction depth. This structure uses polysilicon spacers to replace the oxide sidewall spacers used in a conventional LDD device. The structure has been given the acronym "AGAIN," for added gate after implantation of n−.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
