Abstract
The electric behavior in semiconductor devices is the result of the electric carriers’ injection and evacuation in the low doping region, N-. The carrier’s dynamic is determined by the ambipolar diffusion equation (ADE), which involves the main physical phenomena in the low doping region. The ADE does not have a direct analytic solution since it is a spatio-temporal second-order differential equation. The numerical solution is the most used, but is inadequate to be integrated into commercial electric circuit simulators. In this paper, an empiric approximation is proposed as the solution of the ADE. The proposed solution was validated using the final equations that were implemented in a simulator; the results were compared with the experimental results in each phase, obtaining a similarity in the current waveforms. Finally, an advantage of the proposed methodology is that the final expressions obtained can be easily implemented in commercial simulators.
Highlights
In recent years, several investigations have been carried out in the field of power device modeling with the aim of obtaining electrical simulations closer to their experimental measurements
The carrier dynamics is determined by the ambipolar diffusion equation (ADE) solution, where the expression involves the main physical phenomena in the low doping region
An analytic solution cannot be obtained because it is a second-order differential equation that depends on time and distance [1,2]
Summary
Leobardo Hernandez-Gonzalez 1,* , Jazmin Ramirez-Hernandez 1 , Oswaldo Ulises Juarez-Sandoval 1 , Miguel Angel Olivares-Robles 1 , Ramon Blanco Sanchez 2 and Rosario del Pilar Gibert Delgado 1. Publisher’s Note: MDPI stays neutral with regard to jurisdictional claims in published maps and institutional affiliations
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