Abstract
A surface-potential-based analytical large-signal model, which is applicable to both ballistic and quasi-ballistic transport in InGaAs high electron mobility transistors, is developed. Based on the one-flux method and a new transmission coefficient, a new two-dimensional electron gas charge density is derived, while the dislocation scattering is novelly taken into account. Then, a unified expression for Ef valid in all the regions of gate voltages is determined, which is utilized to directly calculate the surface potential. The flux is used to derive the drain current model incorporating important physical effects. Moreover, the gate-source capacitance Cgs and gate-drain capacitance Cgd are obtained analytically. The model is extensively validated with the numerical simulations and measured data of the InGaAs HEMT device with the gate length of 100 nm. The model is in excellent agreement with the measurements under I-V, C-V, small-signal conditions, and large-signal conditions.
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