Abstract
This letter presents a new edge termination technique named a hybrid junction termination extension (Hybrid-JTE), which combines ring-assisted JTE and multiple floating zone JTE. Based on the parameters of the drift layer specified by the wafer vendor, the measured breakdown voltage of the fabricated p-i-n diode using the Hybrid-JTE is as high as 5450 V, which is close (~99%) of the ideal parallel plane p-n junction. Furthermore, measured breakdown voltages from randomly chosen 32 p-i-n diodes across the wafer show very tight distribution: 29 diodes provide breakdown voltages higher than 5000 V at $100~\mu \text{A}$ .
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