Abstract

In this paper, a nano-watt resistorless subthreshold voltage reference with high-power supply rejection ratio (PSRR) is presented. A self-biased MOS voltage divider is proposed to provide bias current for whole voltage reference, which is a positive temperature coefficient (TC) current containing threshold voltage characteristics. By injecting the generated current into a transistor with a different threshold voltage, a delta threshold voltage with a greatly reduced negative TC is realized and temperature-compensated by a generated positive TC item at the same time. Therefore, a temperature-stable voltage reference is achieved in the proposed compacted method with low power consumption and high PSRR. Verification results with 65-nm CMOS technology demonstrate that the minimum supply voltage can be as low as 0.35 V with a 0.00182-mm2 active area. The generated reference voltage is 148 mV, with a TC of 28 ppm/°C for the − 30 to 80 °C temperature range. The line sensitivity is 1.8 mV/V, and the PSRR without any filtering capacitor at 100 Hz is 53 dB with a 2.28-nW power consumption.

Highlights

  • Voltage reference is one of the core modules in electronic systems, which is widely used in medical electronics, power managements, wireless environmental sensors, and communication circuits

  • Conventional voltage references are based on a bandgap reference (BGR) circuit, which is a weighted sum of VBE and thermal voltage [3, 4]

  • The voltage reference is implemented in a 65-nm CMOS process, whose layout is shown in Fig. 4 occupying a 0.00182-mm2 active area

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Summary

Introduction

Voltage reference is one of the core modules in electronic systems, which is widely used in medical electronics, power managements, wireless environmental sensors, and communication circuits. Due to the nonlinear temperature behavior of VBE, it is essential to use curvature compensation approaches to improve the precision of BGR [5, 6]. Another disadvantage of BGR is the power consumption. The VBE is around 0.7 V without shrinking down with process improvement, which absolutely restricts the supply voltage. These make BGRs unsuitable for low-voltage and nanoscale applications

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