A nanoscale AlGaN/GaN HEMT on BGO substrate with recessed T gate for high frequency applications

Abstract

In this paper a recess gate AlGaN/GaN HEMT on beta gallium oxide (BGO) is designed and analysed using Silvaco ATLAS TCAD software. The DC and RF performance of the device is compared with a schottky gate AlGaN/GaN HEMT on BGO substrate. For optimizing the gate recess depth, three variations with recess depths 6 nm, 12 nm and 20 nm is also simulated. A highest transconductance of 0.4 mS/ µm is observed for recess gate AlGaN/GaN HEMT on BGO substrate with a recess gate depth of 20 nm with a decrease in current density. The radio frequency performance is also highest for the recess gate AlGaN/GaN HEMT with recess gate depth of 20 nm. The device exhibited a maximum oscillation frequency of 2.6 THZ which is highest till reported.