A Nano junctionless Double-Gate MOSFET by Using the Charge Plasma Concept to Improve Short-Channel Effects and Frequency Characteristics

Abstract

In this study, a junctionless double-gate metal-oxide semiconductor field-effect transistor (MOSFET) is investigated by using the concept of charge plasma. The n+ charge plasma in source and drain regions is created electrically in the double-gate MOSFET (CPSD-MOSFET) using additional appropriate metals without applying doping. The results showed that the structure is like a conventional MOSFET, which can improve some electrical parameters. It protects the proposed structure from some limitations such as random doping oscillations and short-channel effects bearing its conventional structure. In addition, high temperature and annealing processes are unnecessary for making the source/drain doping of the CPSD-MOSFET because their regions are created electrically. Thus, the thermal budget step is removed. Furthermore, the proposed structure has some improvements as compared to the junctionless transistor structure, and it can overcome the main problem of this structure, namely the high off current. In general, in the proposed structure, the charge plasma idea changes the charges and depletion regions besides the channel and improves the short-channel effects such as hot electron effect and leakage current because of the improved electric field.