Abstract
A GaAs–InGaAs switching device, prepared by molecular beam epitaxy (MBE), has been investigated. A double delta-doped (δ-doped) strained-layer quantum-well structure is employed to produce the potential wells for the carrier confinement and the potential barriers for carriers thermionically emitted over them. Equipped with the different doping levels of the δ-doped sheets, the barriers are successively collapsed to form a double negative-differential-resistance (NDR) phenomenon in the current–voltage ( I–V ) characteristics when a sufficient external bias is applied to this device. Moreover, because the temperature variation changes the carrier confinement efficiency and carrier thermal energy, the NDR characteristics are sensitive to environmental temperature. The influence of temperature on the device performance is also discussed.
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