Abstract
Non-volatile memory (NVM) will play a very important role in the next-generation digital technologies, including the Internet of things. The metal-oxide memristors, especially based on HfO2, have been favored by lots of researchers because of its simple structure, high integration, fast operation speed, low power consumption, and high compatibility with advanced (complementary metal oxide silicon) CMOS technologies. In this paper, a 20-level stable resistance states Al-doped HfO2-based memristor is presented. Its cycles endurance, data retention time, and resistance ratio are larger than 103, > 104 s, and > 10, respectively.
Highlights
Negative resistance phenomenon firstly was discovered by Hickmott in an Al/Al2O3/Au structure in 1962 [1], and Chua proposed the concept of memristor in 1971 [2]
HfO2 has been used as high-k gate dielectrics in Complementary metal oxide silicon (CMOS) devices since its high reliability, fast operation speed, and low-power consumption [11, 12]
A 20-nm Ti adhesive layer was deposited by direct current (DC) sputtering on a silicon substrate, a 100-nm Pt film was deposited as a bottom electrode (BE)
Summary
Negative resistance phenomenon firstly was discovered by Hickmott in an Al/Al2O3/Au structure in 1962 [1], and Chua proposed the concept of memristor in 1971 [2]. It was not until Strukov et al prepared the TiO2-based memristor in 2008 [3] that people began to pay attention to the study on memristors. HfO2 has been used as high-k gate dielectrics in CMOS devices since its high reliability, fast operation speed, and low-power consumption [11, 12] It is preferred by researchers as a memristive material [13,14,15]. The study on HfO2 multi-level memristors is of great significance
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