A multi‐objective optimization approach for modeling and analyzing the impact of drive parameters in SiC power converters

Abstract

SummaryThis paper introduces an equivalent model including the parasitic parameters analysis of silicon carbide (SiC) MOSFETs in order to enhance their performance for high‐power density applications. The model is used to establish a mechanism that evaluates the effect of drive parameters on switching losses and electrical stress of power devices, providing a theoretical basis for optimizing the design of drive parameters. The paper finds the Pareto solution of the multi‐objective optimization model through iterative calculation of design variables, using this mechanism. The methodology is validated through experimental results from an SiC power prototype, showing an efficiency of 98.9% and safe electrical stress levels under 1500 V/100 kW operating conditions.