Abstract
We demonstrate four-wave mixing (FWM) interactions in a-Si:H waveguides in a multilayer integrated silicon photonic chip. The a-Si:H waveguides are accessed through interlayer couplers from waveguides composed of SiNx. The interlayer couplers achieve a coupling of 0.51 dB loss per transition at the target wavelength of 1550 nm. We observe greater idler power extraction and conversion efficiency from the FWM interaction in the interlayer-coupled multilayer waveguides than in single-material waveguides.
Highlights
Integrated photonics has enabled fantastic growth in the field of optics
By fabricating devices in a single and monolithic platform, photonic systems gain tremendous mechanical stability, precision, and improved performance over those composed of discrete components
The first comes from the topological limitations of a two-dimensional circuit layout, namely, that photonic interconnects cannot cross without the inclusion of relatively complicated enabling structures,1 which take up valuable chip area
Summary
Integrated photonics has enabled fantastic growth in the field of optics. By fabricating devices in a single and monolithic platform, photonic systems gain tremendous mechanical stability, precision, and improved performance over those composed of discrete components. As a result of the planar nature of the fabrication process, conventional integrated photonics exist in a single two-dimensional plane These devices have achieved extraordinary success, their planar structure poses limitations. In smaller single device chips, this may not be such a problem, but as circuits grow more and more complex and multiple devices or even entire optical systems are integrated onto single chips, a single material platform will pose significant design limitations. To address these trade-offs, an effective solution is the use of heterogeneous multilayer integration, where devices fabricated from different materials can be tightly integrated. The two layers were wafer bonded together to form a heterogeneous
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