Abstract
Results of a monolithically integrated Si optical receiver for applications in optical data transmission and in optical interconnects with wavelengths of 638 and 850 nm are presented. The optoelectronic integrated circuit (OEIC) implementing a vertical p-type-intrinsic-n-type photodiode achieves a data rate of 1 Gb/s for 638 nm with a sensitivity of -15.4 dBm at a bit-error rate of 10/sup -9/. The sensitivity of this OEIC in a 1.0-/spl mu/m CMOS technology is improved by at least a factor of four compared to that of published submicrometer OEICs. A 25-THz./spl Omega/ effective transimpedance bandwidth product of the implemented amplifier is achieved.
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