Advanced photo integrated circuits in CMOS technology

Abstract

Results of new CMOS-integrated PIN photodiodes in optoelectronic integrated circuits (OEICs) for applications in optical storage systems, in optical data transmission and in optical interconnects are presented. The rise and fall times of the integrated PIN photodiodes are below 0.3 us. The CMOS-integrated PIN photodiodes are sufficient for a NRZ data rate of 1.5 Gb/s and the results show that PIN CMOS receiver OEICs in submicron technologies enable data rates up to 1 Gb/s. These photodiodes combine this high speed with a high quantum efficiency of approximately 50%. The further improvement of their quantum efficiency above 90% by the integration of an antireflection coating is discussed. Low-offset PIN-CMOS-OEICs for application in digital-versatile-disk (DVD) systems with bandwidths in excess of 32 MHz are presented. A high speed PIN-CMOS-OEIC in 1.0 /spl mu/m technology for optical data transmission exhibits a data rate of 622 Mb/s.