Abstract
For the first time a smart pixel that can function as a building block for an optical transceiverwith circular dimensions is fabricated using an InGaP/GaAs double heterojunction bipolartransistor (DHBT) and a GaAs/AlGaAs vertical cavity surface emitting laser (VCSEL). Anovel InGaP DHBT structure based on an abrupt base–collector heterojunction, theδ+-layer composite collector structure, is employed in this work. The DHBTshowed a breakdown voltage of 13 V and a cut-off frequency of 32 GHz atIc = 30 mA. Also a high performance 850 nm infrared VCSEL exhibited athreshold current of 3.5 mA with a maximum optical output of 4.8 mW atIc = 20 mA and forward voltage of 1.8 V. The detector, comprising the base-to-collectorjunction of the DHBT as a p–i–n photodiode (PD), produced a photocurrent of180 µA for a given input power of 0.3 mW.
Published Version
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