Abstract
In this paper a modified approach to the problem of interpretation of the piezoelectric photothermal (PPT) spectra is presented. The theory includes computations of the temperature distributions in the samples i.e. the instantaneous temperature, temperature amplitude and phase distributions obtained from the presented temperature distribution equation. Application of the modified Jackson and Amer equation resulted in computations of the amplitude and phase spectra of the piezoelectric signals as a function of the photon energy of the exciting light. The computations of the PPT spectra carried out for the series of semiconductor materials, such as GaAs, InSe and p and n-type Si, led to the new interpretation of the peaks, dips and humps observed in experiments. The inactive layer model and its influence on the interpretation of the PPT spectra is presented and discussed.
Published Version
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