Abstract
A model of transient response of semiconductor gas sensor was improved by considering temperature dependency of carrier mobility in SnO2 gas sensor. The model is useful for analysis of transient response of the sensor. Improvements of accuracy of the model have been desired to express the difference of the calculated sensor outputs between the kinds of gases for classifying the kind of gases. The model which considers the temperature dependency of carrier mobility has been newly constructed. The sensor output calculated by new model was a close result by the experiment. Gas classification will be realized by using the model together with activation energy dependence of the sensor output.
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