A Model of the Electrical Transport Phenomena in Imperfect Crystals of Copper Phthalocyanine. III. The Position of the Fermi Level in the Δ‐Model

Abstract

AbstractThe position of the Fermi level is investigated in crystals and in thin films of copper phthalocyanine. Particularly the ideal crystal, the crystal with a discrete trap level, the crystal with a continuous trap distribution on the surface, and crystals and thin films with a combination of a discrete trap level in the bulk and with a continuous trap distribution on the surface were investigated. The position of the Fermi level has a great influence on the conductivity, on the existence of p‐type or n‐type conduction, and on the population of traps. Based on the ideas of the Δ‐model [1, 2] for each case considered the position of the Fermi level is given in dependence on the temperature and on the injection of additional charge carriers by the contacts.