Abstract
ABSTRACTThis study presents an effort to couple a wafer removal rate profile model based on the locally relevant Preston equation to the change in pad thickness profile which reflects to post polish profile of the wafers after Chemical Mechanical Planarization. The result is a dynamic predictor of how the wafer removal rate profile shifts as the pad ages. These predictions can be used to fine tune the conditioner operating characteristics without having to carry out high cost and time consuming experiments. The accuracy of the predictions is demonstrated by individual confirmation experiments in addition to the evaluation of the defectivity performance with the varied pad conditioning profiles.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
