Abstract
The capacitance model is fundamental for the transient analysis, AC analysis and noise analysis of uniaxially strained Si MOSFET device and circuit. Firstly, the 16-differential capacitance model for uniaxially strained Si NMOSFET is developed. Secondly, the simulation results from that model match the experimental results well, which validates the accuracy of the model. Meanwhile the simulated relations of key gate capacitance Cgg to stress intensity, bias voltage，channel length and concentration of poly gate are obtained and analyzed, showing that the value of Cgg is a little larger than that of strainless bulk device while the changing tendency keeps the same.
Published Version
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
