Abstract
In this paper, a model describing the bandgap energy of the dilute nitride alloy In x Ga 1-x N y As 1-y is developed based on the modification of simplified coherent potential approximation (MSCPA) and the band anti-crossing model (BAC). The parameters in the model are obtained by fitting the experimental bandgap energies of the ternary alloys InGaAs , InGaN , GaNAs and InNAs . It is found that the results agree well with the experimental data. We also find that although the bandgap energies of In x Ga 1-x N y As 1-y and In x Ga 1-x As can be calculated by using MSCPA, the physical mechanisms for the bandgap evolution of In x Ga 1-x N y As 1-y and In x Ga 1-x As are very different. In addition, it is found that the model in this work may be used in a larger composition range than the BAC model.
Published Version
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