Abstract

A model for the nucleation and growth processes of Sn whisker is offered. High density of localized screw dislocations by deformation form the dense spiral steps of atomic scale on Sn surface. The spiral steps would induce the nucleation of Sn whisker. Edge dislocations localized at the same region where the dense screw dislocations exist supply Sn atoms to Sn whisker through pipe diffusion. Both screw and edge dislocations would bend along almost one direction, namely, to relax the external shear stress. The image force also helps to bend the dislocations perpendicular to the whisker side-surface. The bending of dislocations at root of whisker leads the bend of whisker. The pipe diffusion of Sn atoms through edge dislocations from bulk Sn toward whisker is suppressed at the bent part of edge dislocation, resulting in release of Sn atoms inside whisker and leading to the growth of whisker near its root.

Highlights

  • Lead (Pb) free electroplating has been attracted considerably because Pb tends to be eliminated from electronic devices according to the RoHS in EU in recent years

  • Two specimens of pure bulk Sn were cut into the parallelepiped shape of 15mm×50mm×3mm, and they were kept with and without tensile stress of around 15 MPa for 20 days, respectively, using the tensile test equipment of Shimadzu Autograph AG-10kNIS

  • It could be suggested that the thickness of the oxide film would not depend on the Sn grain, and the oxide film would not be a controlling for whisker formation

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Summary

A Model for Nucleation and Growth Processes of Tin Whisker

Kiyomichi Nakai, a, Tatsuaki Sakamoto1,b , Sengo Kobayashi1,c , Kazuto Arakawa2,d, Hirotaro Mori2,e, Masao Takamizawa3,f, Koji Murakami4,g and Makoto Hino4,h. The pipe diffusion of Sn atoms through edge dislocations from bulk Sn toward whisker is suppressed at the bent part of edge dislocation, resulting in release of Sn atoms inside whisker and leading to the growth of whisker near its root

Introduction
Experimental Procedures
Results and Discussion
Conclusions
Full Text
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