A model for excess base noise in bipolar junction transistors

Abstract

The modeling of the bipolar junction transistor base region including noise performance has always been a problem. Theory is cumbersome, adequate measurements are difficult to make and the noise does not follow established theory. There is an excess noise up to five times greater than predicted by models. This paper gives the mechanism for the excess base noise with comparison to experimental data. Agreement between model and experiment is excellent. The new mechanism should not be difficult to include in CAE such as SPICE.