Abstract
ABSTRACTAs an attempt to explain polytype formation and crystal growth of SiC we propose an electrostatic model in which electrostatic Coulomb force is considered as an interatomic force. The dependence of surface potential on the stacking sequence of atoms in substrates was investigated, and the growth simulation was tried considering the energetic balance under various interaction lengths.The model predicts the double positioning twin formation and the difference in area between twins in cubic 3C-SiC growth on hexagonal 6H-SiC and rhombohedral 15R-SiC substrates. The prediction was experimentally tested by simultaneous chemical vapor deposition growth on basal planes of 6H-SiC(0001) and 15R-SiC(0001). Polytype and interface structure of both specimens were investigated by reflection high energy electron diffraction (RHEED) and high resolution transmission electron microscopy (HRTEM).
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