Abstract
High-quality single-crystal Gd2O3 nano films have been grown epitaxially on GaN (0001). The films were electron beam evaporated from powder-packed and sintered Gd2O3 target at a substrate temperature of 700°C by molecular beam epitaxy (MBE). Structural studies were carried out by x-ray diffraction using a synchrotron radiation source, and cross sectional high-resolution transmission electron microscopy (HRTEM). The growth was in-situ monitored by reflection high energy electron diffraction. Electrical measurements of I-V and C-V characteristics were also carried out. The films adopt the high temperature monoclinic phase with six domains. The films are well aligned with the GaN substrate with an orientation relationship of Gd2O3 (012)m // GaN (0001), and a dominant in-plane expitaxy of Gd2O3 [020]m // GaN [1120]. Excellent leakage performance (JL~4.6x10-9 A/cm2 at 1MV/cm) is observed after 1100oC RTP, possibly due to a significant domain size increase by ~ 3 times as revealed by grazing incidence x-ray diffraction data together with the Williamson-Hall plot analysis.
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