Abstract
In this paper, the authors present and discuss a model for Cu-Se nano resonant tunneling diodes (RTDs) fabricated by negative template assisted electrodeposition technique and formulate the mathematical equations for it. The model successfully explains the experimental findings.
Highlights
For nanoelectronics to become a reality one must be able to fabricate the devices and circuits at nanometer dimensions
We have developed a model for these resonant tunneling diodes (RTDs)
Experimental Cu-Se RTDs have been fabricated by electrodepositing Cu and Se in the pores of the polycarbonate track-etch membranes (PC TEMs) [3,4]. (PC TEMs) with pores of diameters 1 μm, 100 nm and 40 nm were used for this purpose
Summary
For nanoelectronics to become a reality one must be able to fabricate the devices and circuits at nanometer dimensions. SEM view of Cu-Se RTD of diameter 1 μm in back-scattering mode is shown in the Figure 2. This mode is used to obtain the contrast image of the object. Experimental results of I-V characteristics of Cu-Se binary structures of diameters 2 μm, 1 μm, 100 nm and 40 nm are shown in Figures 4 and 5.
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