Abstract
A simulation model for boron diffusion in silicon, especially useful for analyzing the short time annealing process subsequent to ion implantation, is proposed. This model takes into account nonequilibrium diffusion and reactions of point defects and defect-dopant pairs, considering their charge states, and the dopant inactivation by introducing a dopant clustering reaction. Using a single set of reasonable parameters, the model covers not only the equilibrium diffusion from intrinsic to extrinsic condition, but the nonequilibrium postimplantation diffusion. Experimental boron distribution profiles can be well reproduced in terms of transient-enhanced diffusion and incomplete activation. >
Published Version
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