Abstract
Oxygen annealed radio frequency (RF) reactively sputtered and thermally grown (thermal) Ta2O5 films on sili-con were comparatively studied by using combination of C-V and I-V measurements and the previously developed comprehensive model for the metal-Ta2O5/SiO2-Si structures. Dielectric properties of separate layers were extracted by comparing the experimental and the theoretical results. It is found that the net leakage properties of the Ta2O5 layer are significantly better in the case of RF than thermal, particularly in the case of the Au gate. Excessive growth of the SiO2 layer of about 0.3 nm in the case of RF films leads to an unwanted increase of the equivalent oxide thickness. Appropriate interface engineering is required in order to prevent the SiO2 excessive growth during the oxygen anneal-ing. Such a growth can reduce the beneficial effects of the annealing on the net properties of Ta2O5 films obtained by RF.
Highlights
Ta2O5 films are nowadays extensively investigated for various applications, such as coatings for gravitational-wave detectors [1], multilayer stacked electrode in organic light-emitting diodes [2], resistive switching memories [3], gapless-type atomic switches [4], photocatalysts [5] etc
The fabrication of the insulating layer in the case of thermal growth [9] and radio frequency (RF)-sputtering followed by oxygen anneal [8] is accompanied by unintentional formation of a silicon dioxide layer, and the insulating film has to be treated as a stacked layer
Applying the standard procedures used for MOS structures, the equivalent oxide thickness [17], the fixed charge density (Qf) [18] and the interface state density at midgap (Ditm) [19]were computed
Summary
A MODEL BASED METHOD FOR COMPARING THE PROPERTIES OF SOME METAL-Ta2O5/SiO2-Si STRUCTURES. Oxygen annealed radio frequency (RF) reactively sputtered and thermally grown (thermal) Ta2O5 films on silicon were comparatively studied by using combination of C-V and I-V measurements and the previously developed comprehensive model for the metal-Ta2O5/SiO2-Si structures. Excessive growth of the SiO2 layer of about 0.3 nm in the case of RF films leads to an unwanted increase of the equivalent oxide thickness. Appropriate interface engineering is required in order to prevent the SiO2 excessive growth during the oxygen annealing. Such a growth can reduce the beneficial effects of the annealing on the net properties of Ta2O5 films obtained by RF
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