Abstract
This paper discusses some factors which affect the dimensional limits of miniature piezoresistive catheter pressure sensors, analyses the influence of silicon wafer thickness and piezoresistor area dimensions on the sensitivity of the sensor on the basis of the mechanism of anisotropic etching of (100) silicon and the stress-distribution curve of a rectangular silicon diaphragm, and presents the design, process and passivation technology of a miniature piezoresistive catheter pressure sensor. The size of the sensor chip is 1.0 mm × 2.5 mm, its sensitivity is about 100 μV/V kPa and its resonance frequency is more than 350 kHz. The processing technology is suitable for batch manufacture.
Published Version
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