Abstract
For a number of decades, the modeling of microwave transistors relied on specific well-known characterization methods. Those methods include S-parameters measurement through vector network analyzers (VNAs) ranging from the lower end of the RF spectrum to the millimeter-wave (mm-wave) region and load pull measurements of transistors used for the design of power amplifiers (PAs). Later, the availability of more powerful computer-aided design (CAD) software enabled the need for models of active microwave devices, thus driving a huge amount of research activity on microwave transistor modeling. Simultaneously, new transistor technologies were invented, combining working concepts such as heterojunction bipolar transistors (HBTs), metal semiconductor field effect transistors (MESFETs) or high electron mobility transistors (HEMTs) and new materials such as gallium arsenide (GaAs), gallium nitride (GaN), indium phosphide (InP), and silicon germanium (SiGe), to cite only the main ones.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.