Abstract
A microscopic model of quantum well infrared photodetectors (QWIPs) is presented, based on quantum scattering rate equation approach. The macroscopic parameters and figures of merit such as current density, responsivity, capture probability and drift velocity, can be estimated directly from a first principles calculation. For conventional GaAs/AlGaAs QWIP device, a very good agreement was found between the calculated and the measured data taken from the literature. The model is general and can be applied to any other material system or QWIP structure.
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