A microprocessor-based beam sweep control unit

Abstract

Using a microprocessor a beam sweep control module has been developed that facilitates ion beam experiments or ion implantation at a constant ion beam density. The density is regulated by varying the amplitude of an x- y-deflection system. The control unit supplies an analogue output voltage which is employed to adjust this amplitude. In our experiment a commercially available DANFYSIK Model 730 beam sweep system has been modified to enable external amplitude control. The control unit can be operated manually or by computer support. In any case the initial ion beam density and ion dose are to be set manually. Four functions (START, STOP, RESET, optional: SHUTTER) are controlled via push buttons or external signals. Coincident with the START-signal the shutter is opened. The ion charge on the target is now accumulated for 10 s. If deviations larger than 2% full scale from the initial beam density are measured the analogue output voltage of the control unit is changed. In case the initial value cannot be regulated within a limited voltage range, a warning is given (lamp and level). Under normal operation the shutter is closed when the preset ion dose has been accumulated. The control unit is manufactured in a standard NIM housing (four units) and has the following features: analogue instruments for (1) ion current and (2) deviation between initial and actual ion current, (3) three digits and one exponent to preset the ion charge, digital displays for (4) accumulated ion charge and (5) time, and (6) a potentiometer to set the initial control voltage, i.e. the ion beam density. The combination of these features together with the simple three - pushbutton - operation makes the instrument a very versatile tool for ion beam experiments.