Abstract
An array probe card fabricated on a silicon wafer for high performance and high pin count applications is characterized. The probe card is capable of providing a very large number of probe tips (>1000) that offer a contact resistance of less than 2 /spl Omega/. A novel approach to replacing the mechanical scrubbing motion with an electrical breakdown process is presented. The probe card is capable of operating at elevated temperatures for extended periods of time, offers alternative probe tip configurations, and is capable of probing a variety of pad metals. Controlled impedance (50 /spl Omega/) striplines that run all the way to the probe tips offer a delay time of 68 ps/cm, 3 GHz bandwidth, and far-end cross-talk of -49 dB/cm at a pitch of 32 /spl mu/m.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>
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