Abstract
On-chip global nanophotonic interconnects are promising alternatives to traditional metallic interconnects in giga-scale integrated circuits. At the very first step, the design and optimization of nanophotonic interconnects require the modelling and characterization of optoelectronic devices with irregular 3D geometries. In this paper, a methodology for the SPICE-compatible modelling of such devices is proposed which does not rely on post-manufacturing data. This methodology couples the optics and electronics domains of such devices in order to improve the model accuracy. The proposed methodology has been applied to the modelling of a waveguide-coupled integrated Metal-Semiconductor-Metal PhotoDetector (MSM PD) with quadratic nanotapers. We have performed optics domain simulation in 3D field-solver MEEP and device simulations using Silvaco Atlas device-TCAD tool. The simulation results agree well with measurement data reported in literature. Agreement with less than 12% error at all bias voltages is observed.
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