Abstract
An analysis of the above-threshold stability of distributed feedback (DFB) semiconductor laser diodes (LD's) is presented. It is based on a numerical model which takes into account effects of spatial hole burning (SHB) and the nonlinear gain coefficient. In the analysis, the Newton-Raphson (NR) technique has not been used, and no functional derivative is required. Taking into account the presence of another nonlasing mode, the single-mode stability of the DFB laser diodes is determined. The proposed model does not depend on any particular DFB structure, and hence can be applied to various DFB LD structures. Numerical results are presented for a three-phase-shift (3PS) DFB LD.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>
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