Abstract
A method for the calculation of shape and height of potential barriers in interfacial layers is proposed. The transmission function of complex structures can be calculated for arbitrarily chosen potential models, while the actual transmission function is derived from the energy distribution of electrons having traversed the given potential barrier. Therefore, the potential is determined by adjusting model parameters by optimization techniques to match the model and the actual transmission functions. This method has been applied to low work function surfaces. The main features of the method in connection with the data obtained for Cs2O covered surfaces of p+-GaAs are discussed.
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