Abstract
A method for the calculation of shape and height of potential barriers in interfacial layers is proposed. The transmission function of complex structures can be calculated for arbitrarily chosen potential models, while the actual transmission function is derived from the energy distribution of electrons having traversed the given potential barrier. Therefore, the potential is determined by adjusting model parameters by optimization techniques to match the model and the actual transmission functions. This method has been applied to low work function surfaces. The main features of the method in connection with the data obtained for Cs2O covered surfaces of p+-GaAs are discussed.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
