Abstract
This paper proposes a new method to separate the package-related wear-out failure mechanisms of wire-bonded silicon-based power semiconductor switches: bond-wires lift-off and solder layer degradation. The proposed method takes the on-state voltages of power semiconductor device during the start-up transient and steady-state of power converters only, respectively, to realize the separation. It overcomes the challenges faced by existing separation methods that have complex off-line implementation process or are applicable to the devices with specific bond-wires connection and operational characteristic. The proposed method has the features of easy-of-implementation, on-line implementation, and relatively general application compared to existing methods. A case study with a single-phase inverter is demonstrated to prove the effectiveness of the proposed method.
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