Abstract
The study of deep centres induced by irradiation of charged particles in semiconductors is difficult due to the large number of different centres created. These centres may have close energy levels, so that the free-carrier emission processes observed by the capacitance transients are a combination of the contributions of several centres. In this study, we have used a set of isothermal relaxation measurements covering a broad temperature range for excitation. For each experiment, the emission rates of the accessible levels are obtained by a statistical analysis of the experimental data. The method is written in GLOP code with which, on the basis of a suggested fitting model, the relevant parameters are evaluated. Moreover, it gives the physicist a guideline for comparing several models (differing for example in the number of deep centres). The method has been applied to the study of the base material of silicon solar cells irradiated by low-energy protons.
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