Abstract
A simple method for determining the static conductivity of semiconductor transparent heat mirrors is developed that is based on the relationships of Drude theory and high-frequency optical measurements. The method consists of two steps. In the first step, the dielectric permittivity of the lattice eL and the plasma wavelength λp of the semiconductor film (a part of the heat mirror) are determined graphically using the reflectance measured at extreme points of interference fringes that are observed in the transparency regions of the reflectance spectra. The second step consists in the numerical computation of relaxation times and the static conductivity using the derived values of eL and λp and an experimental value of total emittance. The method was tested with transparent heat mirrors based on films of tin-doped indium oxide.
Published Version
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