Abstract
Experimental results and a description of operating mechanisms are presented for a new, easily integrated M ISS device using MOS-type gating. The device is a lateral version of the MISS structure with switching voltage control obtained via channel modulation using the MOS gate. For the devices presented here the switching voltage can be varied between 2 V and 14 V using the MOS gate. The device can be applied to the same areas as the conventional MISS, however the ease of Integration makes it especially attractive for integrated logic circuits.
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